Ordering number:EN4886
FX603
P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Features
路 Composite type composed of two low ON-resistance
P-channel MOSFET chips for ultrahigh-speed
switching and low-voltage drive.
路 Facilitates high-density mounting.
路 The FX603 is formed with two chips, each being
equivalent to the 2SJ187, placed in one package.
路 Matched pair characteristics.
Package Dimensions
unit:mm
2120
[FX603]
1:Gate1
2:Source1
3:Source2
4:Gate2
5:Drian2
6:Drian1
SANYO:XP6
(Bottom view)
Switching Time Test CIrcuit
Electrical Connection
1:Gate1
2:Source1
3:Source2
4:Gate2
5:Drian2
6:Drian1
(Top view)
Specifications
Absolute Maximum Ratings
at Ta = 25藲C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PD
PT
Tch
Tstg
PW
鈮?/div>
10碌s, duty cycle
鈮?/div>
1%
Tc=25藲C, 1unit
Mounted on ceramic board
Mounted on ceramic board
(750mm
2
脳0.8mm)
(750mm
2
脳0.8mm)
1unit
Conditions
Ratings
鈥?0
鹵15
鈥?
鈥?
6
1.5
2
150
鈥?5 to +150
Unit
V
V
A
A
W
W
W
藲C
藲C
路 Marking:603
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/71095MO (KOTO) TA-0109 No.4886-1/4
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