Ordering number:EN5028
FX401
TR:PNP Epitaxial Planar Silicon Transistor
SBD:Schottky Barrier Diode
DC-DC Converter
Features
路 Complex type of a low saturation voltage, high speed
switching and large current PNP transistor and a fast
recovery and low forward voltage Shottky barrier
diode facilitating high-density mounting,
路 The FX401 is composed on 2chips, one being
equivalent to the 2SB1121 and the other the SB30-
03P, placed in one package.
Package Dimensions
unit:mm
2123
[FX401]
Electrical Connection
1:Base
2:Emitter
3:No Contact
4:Anode
5, 6:Common
(Collector, Cathode)
(Top view)
1:Base
2:Emitter
3:No Contact
4:Anode
5:Common
(Collector, Cathode)
6:Common
(Collector, Cathode)
SANYO:XP5
(Bottom view)
Switching Time Test CIrcuit
Trr Test Circuit
Specifications
Absolute Maximum Ratings
at Ta = 25藲C
Parameter
[TR]
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
[SBD]
Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Surge Voltage
Average Rectified Current
Surge Forward Current
Junction Temperature
Storage Temperature
VRRM
V RSM
IO
IFSM
Tj
Tstg
50Hz sine wave, 1cycle
30
35
3
10
鈥?5 to +125
鈥?5 to +125
V
V
A
A
藲C
藲C
Symbol
VCBO
VCEO
VEBO
IC
I CP
IB
PC
Tj
Conditions
Ratings
鈥?0
鈥?5
鈥?
鈥?
鈥?
鈥?00
Unit
V
V
V
A
A
mA
W
藲C
Mounted on ceramic board
(750mm
2
脳0.8mm)
1.5
150
路 Marking:401
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/41095TS (KOTO) TA-0087 No.5028-1/4