鈮?/div>
1%
Tc=25藲C
Mounted on ceramic board
(750mm
2
脳0.8mm)
Conditions
Ratings
20
鹵10
4
16
8
2
150
鈥?5 to +150
Unit
V
V
A
A
W
W
藲C
藲C
Electrical Characteristics
at Ta = 25藲C
Parameter
D-S Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source ON-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
| Yfs |
RDS(on)
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
ID=鈥?mA, VGS=0
VDS=16V, VGS=0
VGS=鹵8V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=2A
ID=2A, VGS=4V
ID=1A, VGS=2.5V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
IS=4A, VGS=0
0.5
3.5
5
65
85
400
300
160
20
70
100
120
1.0
1.2
85
125
Conditions
Ratings
min
20
100
鹵10
1.5
typ
max
Unit
V
碌A(chǔ)
碌A(chǔ)
V
S
m鈩?/div>
m鈩?/div>
pF
pF
pF
ns
ns
ns
ns
V
路 Marking:208
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/42895MO (KOTO) TA-0133 No.5051-1/3
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2
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