FW306
N- Channel Silicon MOS FET
High Speed Switching
TENTATIVE
Features
鈥?High density mounting is possible because of the complex type which holds low-on-resistance, very-high-speed-switching and
4-volt-drive N- / P- channel / MOSFETs.
鈥?Low ON-state resistance.
Absolute Maximum Ratings / Ta=25擄C
Drain to Source Voltage
Gate to Source Voltage
Drain Current(DC)
Drain Current(Pulse)
Allowable power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Electrical Characteristics / Ta=25擄C
(N-channel)
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source
On State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
N-channel
30
鹵25
5
32
1.7
2.0
150
--55 to
鹵150
min
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on) 1
RDS(on) 2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
ID=1mA
VDS=30V
VGS=鹵20V
VDS=10V
VDS=10V
ID=5A
ID=2A
VDS=10V
VDS=10V
VDS=10V
,
,
,
,
,
,
,
,
,
,
VGS=0
VGS=0
VDS=0
ID=1mA
ID=5A
VGS=10V
VGS=4V
f=1MHz
f=1MHz
f=1MHz
30
100
鹵10
2.5
8
50
84
460
340
85
13
300
30
50
1.0
65
120
typ
max
P-channel
30
鹵25
--3
--32
unit
V
V
A
A
W
W
擄C
擄C
unit
V
碌A(chǔ)
碌A(chǔ)
V
S
m鈩?/div>
m鈩?/div>
pF
pF
pF
ns
ns
ns
ns
V
PW鈮?0碌S, dutycycle鈮?%
Mounted on ceramic board
(1000mm
2
!
0.8mm) 1unit
Mounted on ceramic board
(1000mm
2
!
0.8mm)
1.0
5
See Specified Test
Circuit
IS=5A
, VGS = 0
1.2
(P-channel)
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source
On State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
min
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on) 1
RDS(on) 2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
ID=--1mA
VDS=--30V
VGS=鹵20V
VDS=--10V
VDS=--10V
ID=--3A
ID=--2A
VDS=--10V
VDS=--10V
VDS=--10V
,
,
,
,
,
,
,
,
,
,
VGS=0
VGS=0
VDS=0
ID=--1mA
ID=--3A
VGS=--10V
VGS=--4V
f=1MHz
f=1MHz
f=1MHz
--30
typ
max
--100
鹵10
--2.5
unit
V
碌A(chǔ)
碌A(chǔ)
V
S
m鈩?/div>
m鈩?/div>
pF
pF
pF
ns
ns
ns
ns
V
--1.0
3
See Specified Test
Circuit
IS=--3A
, VGS = 0
5
110
200
460
350
80
13
150
30
50
--1.0
160
320
--1.2
Specifications and information herin are subject to change without notice.
SANYO Electric Co., Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN
990401TM2fXHD
1
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