鈮?/div>
1%
Mounted on ceramic board
Mounted on ceramic board
(1200mm
2
脳0.8mm)
(1200mm
2
脳0.8mm)
1unit
Conditions
0.1
1.5
1.8max
1
4
0.2
Ratings
20
鹵10
5
48
1.7
2.0
150
鈥?5 to +150
6.0
Unit
V
V
A
A
W
W
藲C
藲C
Electrical Characteristics
at Ta = 25藲C
Parameter
D-S Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-Source Leak Current
Cutoff Current
Forward Transfer Admittance
Static Drain-to-Source ON-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=1mA, VGS=0
VDS=20V, VGS=0
VGS=鹵8V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=5A
ID=5A, VGS=4V
ID=2A, VGS=2.5V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=10V, VGS=10V, ID=5A
VDS=10V, VGS=10V, ID=5A
VDS=10V, VGS=10V, ID=5A
IS=5A, VGS=0
0.4
8
13
38
50
500
280
150
20
250
70
130
22
3
3
1.0
1.2
50
70
Conditions
Ratings
min
20
100
鹵10
1.3
typ
max
Unit
V
碌A(chǔ)
碌A(chǔ)
V
S
m鈩?/div>
m鈩?/div>
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52698TS (KOTO) TA-0974 No.5850-1/3
1
2
3
