Ordering number:EN5579A
N-Channel Silicon MOSFET
FW211
DC-DC Converter Applications
Features
路 Low ON resistance.
路 2.5V drive.
Package Dimensions
unit:mm
2129
[FW211]
8
5
0.3
4.4
6.0
0.2
5.0
0.595
1.27
0.43
Specifications
Absolute Maximum Ratings
at Ta = 25藲C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
PW鈮?0碌s, duty cycle鈮?%
Mounted on a ceramic board (1000mm
2
脳0.8mm)
1unit
Mounted on a ceramic board (1000mm
脳0.8mm)
2
0.1
1.5
1.8max
1
4
1:Source 1
2:Gate 1
3:Source 2
4:Gate 2
5:Drain 2
6:Drain 2
7:Drain 1
8:Drain 1
SANYO:SOP8
Conditions
Ratings
20
鹵10
6
52
1.7
2.0
150
鈥?5 to +150
Unit
V
V
A
A
W
W
藲C
藲C
Electrical Characteristics
at Ta=25藲C
Parameter
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source ON-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain "Miller" Charge
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS=5A, VGS=0
VDS=10V, VGS=10V, ID=1A
ID=1mA, VGS=0
VDS=20V, VGS=0
VGS=鹵8V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=5A
ID=5A, VGS=4V
ID=2A, VGS=2.5V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See Specified Test Circuit
See Specified Test Circuit
See Specified Test Circuit
See Specified Test Circuit
0.4
9
15
27
35
750
520
300
20
200
150
150
30
5
7
1.0
1.2
35
48
Conditions
Ratings
min
20
100
鹵10
1.3
typ
max
Unit
V
碌A(chǔ)
碌A(chǔ)
V
S
m鈩?/div>
m鈩?/div>
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
61598TS (KOTO) TA-0861 No.5579-1/3
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2
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