鈮?/div>
1%
Mounted on ceramic board
Mounted on ceramic board
(1000mm
2
脳0.8mm)
(1000mm
2
脳0.8mm)
1unit
Conditions
0.1
1.5
1.8max
1
4
0.2
Ratings
鈥?0
鹵20
鈥?
鈥?2
1.7
2.0
150
鈥?5 to +150
6.0
Unit
V
V
A
A
W
W
藲C
藲C
Electrical Characteristics
at Ta = 25藲C
Parameter
D-S Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Current
Forward Transfer Admittance
Static Drain-to-Source ON-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=鈥?mA, VGS=0
VDS=鈥?0V, VGS=0
VGS=鹵16V, VDS=0
VDS=鈥?0V, ID=鈥?mA
VDS=鈥?0V, ID=鈥?A
ID=鈥?A, VGS=鈥?0V
ID=鈥?A, VGS=鈥?V
VDS=鈥?0V, f=1MHz
VDS=鈥?0V, f=1MHz
VDS=鈥?0V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=鈥?0V, VGS=鈥?0V, ID=鈥?A
VDS=鈥?0V, VGS=鈥?0V, ID=鈥?A
VDS=鈥?0V, VGS=鈥?0V, ID=鈥?A
IS=鈥?A, VGS=0
鈥?.0
5
8
42
85
820
470
230
15
150
85
90
25
5
7
鈥?.0
鈥?.5
53
120
Conditions
Ratings
min
鈥?0
鈥?00
鹵10
鈥?.5
typ
max
Unit
V
碌A(chǔ)
碌A(chǔ)
V
S
m鈩?/div>
m鈩?/div>
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52698TS (KOTO) TA-1215 No.5847-1/3
1
2
3
