FTM3725
FTM3725
NPN Transistor
鈥?This device is designed for high current, low impedance line driver
applications.
鈥?Sourced from process 26.
E1
E2
B1
B2
B4
E3
E4
B4
C2
C2
C1
C1
SOIC-16
C4
C4
C3
C4
Mark: FTM3725
Absolute Maximum Ratings*
T
a
=25擄C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
STG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Operating and Storage Junction Temperature Range
Parameter
Value
40
60
6.0
1.2
- 55 ~ 150
Units
V
V
V
A
擄C
* These ratings are limiting values above whitch the serviceability of any semiconductor device may be impaird.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
Off Characteristics
V
(BR)CEO
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CBO
Parameter
Test Condition
I
C
= 10mA, I
B
= 0
I
C
= 10碌A, V
BE
= 0
I
C
= 10碌A, I
E
= 0
I
E
= 10碌A, I
C
= 0
V
CB
= 50V, I
E
= 0
V
CB
= 50V, I
E
= 0, T
a
= 100擄C
I
C
= 10mA, V
CE
= 1.0V
I
C
= 100mA, V
CE
= 1.0V
I
C
= 100mA, V
CE
= 1.0V, T
a
= 55擄C
I
C
= 300mA, V
CE
= 1.0V
I
C
= 500mA, V
CE
= 1.0V
I
C
= 500mA, V
CE
= 1.0V, T
a
= 55擄C
I
C
= 800mA, V
CE
= 2.0V
I
C
= 1.0mA, V
CE
= 5.0V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 100mA, I
B
= 10mA
I
C
= 300mA, I
B
= 30mA
I
C
= 500mA, I
B
= 50mA
I
C
= 800mA, I
B
= 80mA
I
C
= 1.0mA, I
B
= 100mA
I
C
= 10mA, I
B
= 1.0mA
I
C
= 100mA, I
B
= 10mA
I
C
= 300mA, I
B
= 30mA
I
C
= 500mA, I
B
= 50mA
I
C
= 800mA, I
B
= 80mA
I
C
= 1.0mA, I
B
= 100mA
30
60
30
40
35
20
20
25
Min.
40
60
60
6.0
100
10
Typ.
Max.
Units
V
V
V
V
nA
碌A
Collector-Emitter Breakdown Voltage *
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
On Characteristics *
h
FE
DC Current Gain
180
V
CE
(sat)
Collector-Emitter Saturation Voltage
0.25
0.26
0.4
0.52
0.8
0.95
0.76
0.86
1.1
1.2
1.5
1.7
V
V
V
V
V
V
V
V
V
V
V
V
V
BE
(sat)
Base-Emitter Saturation Voltage
漏2004 Fairchild Semiconductor Corporation
Rev. B, June 2004
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