FSU10B60 Datasheet

IC型號：
FSU10B60
PDF描述：
FOR POWER FACTOR IMPROVEMENT HIGH FREQUENCY RECTIFICATION
文件大?。?/label>
45.81KB
PDF頁數：
5頁
芯片廠家：
NIEC

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FRD

FEATURES

Type :

FSU10B60

OUTLINE DRAWING

For Power Factor Improvement High Frequency Rectification

* Fully Molded Isolation Case

* Ultra 鈥?Fast Recovery

* Low Forward Voltage Drop

* Low Power Loss, High Efficiency

* High Surge Capability

Maximum Ratings

Rating

Repetitive Peak Reverse Voltage

Average Rectified Output Current

RMS Forward Current

Surge Forward Current

Operating JunctionTemperature Range

Storage Temperature Range

Mounting torque

Symbol

RRM

F(RMS)

FSM

Tjw

Tstg

0.5

100

Approx Net Weight:1.7g

FSU10B60

600

50 Hz Half Sine Wave

Tc=60擄C

Resistive Load

15.7

50 Hz Half Sine Wave,1cycle

Non-repetitive

- 40 to + 150

Recommended value

Unit

擄C

鈥?/div>

Electrical

鈥?/div>

Thermal Characteristics

Characteristics

Peak Reverse Current

Peak Forward Voltage

Reverse Recovery Time

Thermal Resistance

Symbol

Conditions

Min.

Typ.

2.3

Max. Unit

2.7

1.5

碌A

擄C/W

Tj= 25擄C, V

= V

RRM

Tj= 25擄C, I

= 10A

= 10A,

trr

-di/dt= 50 A/碌s, Ta= 25擄C

Rth(j-c) Junction to Case

Rth(c-f) Case to Fin

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