FSU10A30 Datasheet

IC型號：
FSU10A30
PDF描述：
For Power Factor Improvement High Frequency Rectification
文件大?。?/label>
74.07KB
PDF頁數(shù)：
5頁
芯片廠家：
NIEC

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10A 300V 35ns

SBD

Type :

FSU10A30

OUTLINE DRAWING

For Power Factor Improvement High Frequency Rectification

FEATURES

* Ultra 鈥?Fast Recovery

* Low Power Loss, High Efficiency

* High Surge Capability

* Fully Molded Isolation

Maximum Ratings

Rating

Repetitive Peak Reverse Voltage

Average Rectified Output Current

RMS Forward Current

Surge Forward Current

Operating JunctionTemperature Range

Storage Temperature Range

Mounting torque

Symbol

RRM

F(RMS)

FSM

Tjw

Tstg

0.5

120

Approx Net Weight:1.70g

FSU10A30

300

50 Hz,Half Sine Wave

Tc=90擄C

Resistive Load

15.7

50 Hz Half Sine Wave,1cycle

Non-repetitive

- 40 to + 150

Recommended value

Unit

擄C

鈥?/div>

Electrical

鈥?/div>

Thermal Characteristics

Characteristics

Peak Reverse Current

Peak Forward Voltage

Reverse Recovery Time

Thermal Resistance

Symbol

Conditions

Min.

Typ.

1.2

Max. Unit

1.4

1.5

碌A(chǔ)

擄C/W

Tj=25擄C,V

RRM

Tj=25擄C, I

=10A

= 10A,

trr

-di/dt= 50 A/碌s, Ta= 25擄C

Rth(j-c) Junction to Case

Rth(c-f) Case to Fin

型號

版本

描述

廠商

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