FSC150 Datasheet

IC型號(hào)：
FSC150
PDF描述：
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | CHIP
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52.79KB
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ETC

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FSC150

Data Sheet

May 1999

File Number

4715

Radiation Hardened, SEGR Resistant

N-Channel Power MOSFET

Features

鈥?100V, 25A (Note), 0.070

鈩?/div>

鈥?Total Dose

- Meets Pre-RAD Speci鏗乧ations to 100K RAD (Si)

鈥?Single Event

- SEE Immunity for 1E5 ions/cm

having an LET of

36MeV/mg/cm

and a Range of 36

碌

m with V

up to

80% of Rated Breakdown and V

of 10V Off-Bias

鈥?Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80% BV

DSS

- Typically Survives 2E12 if Current Limited to I

鈥?Photo Current

- 7.0nA Per-RAD(Si)/s Typically

鈥?Neutron

- Maintain Pre-RAD Speci鏗乧ations

for 3E13 Neutrons/cm

- Usable to 3E14 Neutrons/cm

NOTE: Current rating de鏗乶ed for TO-254AA package.

Die Characteristics

ATTACH AREAS:

(S) Source - 0.060鈥?Diameter

(G) Gate - 0.032鈥?x 0.032鈥?/div>

(D) Drain - Back Side

DIE THICKNESS:

14 mil

鹵

1 mil

CONTACT METALLIZATION:

Gate and Source - Aluminum (4

碌

)

Drain - Quad-Metal (Al-Ti-Ni-Au)

[Al (3

碌

) - Ti (0.3

碌

) - Ni (1

碌

) - Au (0.05

碌

)]

Metallization Mask Layout

FSC150

259 MILS

Symbol

Ordering Information

RAD LEVEL

100K

SCREENING LEVEL

JANKC

PART NUMBER/BRAND

FSC150

型號(hào)

版本

描述

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FSC150

英文版

TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | CHIP

ETC

FSC150
FSC110R

英文版

TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | CHIP

ETC

FSC110R

FSC150 Datasheet

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