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FSBCW30

Discrete POWER & Signal

Technologies

FSBCW30

C

E

B

SuperSOT

TM

-3

PNP General Purpose Amplifier

This device is designed for general purpose medium power

amplifiers and switches requiring collector currents to 300 mA.

Sourced from Process 68. See BC857A for characteristics.

Absolute Maximum Ratings*

Symbol

V

CEO

V

CBO

V

EBO

I

C

T

J

, T

stg

Collector-Base Voltage

Emitter-Base Voltage

Collector Current - Continuous

TA = 25擄C unless otherwise noted

Parameter

Collector-Emitter Voltage

Value

32

32

5.0

500

-55 to +150

Units

V

V

V

mA

擄C

Operating and Storage Junction Temperature Range

*

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1)

These ratings are based on a maximum junction temperature of 150 degrees C.

2)

These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

Symbol

P

D

R

胃JA

TA = 25擄C unless otherwise noted

Characteristic

Total Device Dissipation

Derate above 25擄C

Thermal Resistance, Junction to Ambient

2

Max

FSBCW30

500

4

250

Units

mW

mW/擄C

擄C/W

*

Device mounted on FR-4 PCB 4.5" x 5"; mounting pad 0.02 in

of 2oz copper.

漏

1998 Fairchild Semiconductor Corporation

FSBCW30, Rev B

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  英文版
  PNP General Purpose Amplifier
  FAIRCHILD
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  英文版
  PNP General Purpose Amplifier
  FAIRCHILD ...
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