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FSB649 Datasheet

  • FSB649

  • NPN Low Saturation Transistor

  • 3頁(yè)

  • FAIRCHILD

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FSB649
FSB649
C
E
B
SuperSOT
TM
-3
NPN Low Saturation Transistor
These devices are designed with high current gain and low saturation voltage with collector currents up to 3A
continuous. Sourced from Process NC.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J,
T
stg
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
T
A = 25擄C unless otherwise noted
FSB649
25
35
5
3
-55 to +150
Units
V
V
V
A
擄C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150擄C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
T
A = 25擄C unless otherwise noted
Max
Characteristic
FSB649
P
D
R
胃JA
Total Device Dissipation
Thermal Resistance, Junction to Ambient
500
250
mW
擄C/W
Units
漏
1999 Fairchild Semiconductor Corporation
fsb649.lwpPrNC revA

FSB649 產(chǎn)品屬性

  • 3,000

  • 分離式半導(dǎo)體產(chǎn)品

  • 晶體管(BJT) - 單路

  • -

  • NPN

  • 3A

  • 25V

  • 600mV @ 300mA，3A

  • -

  • 100 @ 1A，2V

  • 500mW

  • 150MHz

  • 表面貼裝

  • TO-236-3，SC-59，SOT-23-3

  • 3-SSOT

  • 帶卷 (TR)

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