= 0.140鈩?/div>
鈥?Second Generation Rad Hard MOSFET Results From New Design Concepts
鈥?Gamma
-
-
-
-
-
Meets Pre-RAD Speci鏗乧ations to 100K RAD (Si)
De鏗乶ed End Point Specs at 300K RAD (Si) and 1000K RAD (Si)
Performance Permits Limited Use to 3000K RAD (Si)
Survives 3E9 RAD (Si)/s at 80% BV
DSS
Typically
Survives 2E12 Typically If Current Limited to IDM
鈥?Gamma Dot
鈥?Photo Current
鈥?Neutron
- 7.0nA Per-RAD (Si)/s Typically
- Pre-RAD Speci鏗乧ations for 3E13 Neutrons/cm
2
- Usable to 3E14 Neutrons/cm
2
CAUTION: Beryllia Warning per MIL-S-19500
refer to package speci鏗乧ations.
Description
Intersil Corporation has designed a series of SECOND GENERATION hardened
power MOSFETs of both N and P channel enhancement types with ratings from
100V to 500V, 1A to 60A, and on resistance as low as 25m鈩? Total dose hardness
is offered at 100K RAD (Si) and 1000K RAD (Si) with neutron hardness ranging
from 1E13n/cm
2
for 500V product to 1E14n/cm
2
for 100V product. Dose rate hard-
ness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with
current limiting.
This MOSFET is an enhancement-mode silicon-gate power 鏗乪ld effect transistor of
the vertical DMOS (VDMOS) structure. It is specially designed and processed to
exhibit minimal characteristic changes to total dose (GAMMA) and neutron (n
o
)
exposures. Design and processing efforts are also directed to enhance survival to
heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.
This part may be supplied as a die or in various packages other than shown above.
Reliability screening is available as either non TX (commercial), TX equivalent of
MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of
MIL-S-19500. Contact the Intersil Corporation High-Reliability Marketing group for
any desired deviations from the data sheet.
Symbol
D
G
S
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Speci鏗乪d
FRF9150D, R, H
-100
-100
23
15
69
鹵20
125
50
1.00
69
23
69
-55 to +150
300
UNITS
V
V
A
A
A
V
W
W
W/
o
C
A
A
A
o
C
o
C
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain-Gate Voltage (R
GS
= 20k鈩? . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Continuous Drain Current
T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
T
C
= +100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation
T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
T
C
= +100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Derated Above +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Inductive Current, Clamped, L = 100碌H, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . .I
LM
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
S
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
SM
Operating And Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
JC
, T
STG
Lead Temperature (During Soldering)
Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
漏
Intersil Corporation 1999
File Number
3243.2
4-1
INTERSIL
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