FQT7P06
May 2001
QFET
FQT7P06
60V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild鈥檚 proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, DC/
DC converters, and high efficiency switching for power
management in portable and battery operated products.
TM
Features
鈥?/div>
鈥?/div>
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-1.6A, -60V, R
DS(on)
= 0.41鈩?@V
GS
= -10 V
Low gate charge ( typical 6.3 nC)
Low Crss ( typical 25 pF)
Fast switching
Improved dv/dt capability
S
!
D
G
!
S
G
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鈻?鈻?/div>
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SOT-223
FQT Series
!
D
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
T
C
= 25擄C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25擄C)
Drain Current
- Continuous (T
C
= 70擄C)
Drain Current
- Pulsed
(Note 1)
FQT7P06
-60
-1.6
-1.28
-6.4
鹵
25
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/擄C
擄C
擄C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25擄C)
90
-1.6
0.21
-7.0
2.1
0.017
-55 to +150
300
- Derate above 25擄C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
R
胃JA
Parameter
Thermal Resistance, Junction-to-Ambient *
Typ
--
Max
60
Units
擄C/W
* When mounted on the minimum pad size recommended (PCB Mount)
漏2001 Fairchild Semiconductor Corporation
Rev. A, May 2001
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