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FQT3P20 Datasheet

  • FQT3P20

  • 200V P-Channel MOSFET

  • 8頁

  • FAIRCHILD

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FQT3P20
May 2001
QFET
FQT3P20
200V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild鈥檚 proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters.
TM
Features
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
-0.67A, -200V, R
DS(on)
= 2.7鈩?@V
GS
= 10 V
Low gate charge ( typical 6.0 nC)
Low Crss ( typical 7.5 pF)
Fast switching
Improved dv/dt capability
S
!
D
G
!
S
G
鈼?/div>
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鈻?鈻?/div>
鈼?/div>
SOT-223
FQT Series
!
D
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
T
C
= 25擄C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25擄C)
Drain Current
- Continuous (T
C
= 70擄C)
Drain Current
- Pulsed
(Note 1)
FQT3P20
-200
-0.67
-0.53
-2.7
鹵
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/擄C
擄C
擄C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25擄C)
150
-0.67
0.25
-5.5
2.5
0.02
-55 to +150
300
- Derate above 25擄C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
R
胃JA
Parameter
Thermal Resistance, Junction-to-Ambient *
Typ
--
Max
50
Units
擄C/W
* When mounted on the minimum pad size recommended (PCB Mount)
漏2001 Fairchild Semiconductor Corporation
Rev. A, May 2001

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