鈥?/div>
2.8A, 60V, R
DS(on)
= 0.14鈩?@V
GS
= 10 V
Low gate charge ( typical 5.8 nC)
Low Crss ( typical 15 pF)
Fast switching
Improved dv/dt capability
D
!
D
"
S
G
G
!
! "
"
"
SOT-223
FQT Series
!
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
T
C
= 25擄C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25擄C)
Drain Current
- Continuous (T
C
= 70擄C)
Drain Current
- Pulsed
(Note 1)
FQT13N06
60
2.8
2.24
11.2
鹵
25
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/擄C
擄C
擄C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25擄C)
85
2.8
0.21
7.0
2.1
0.017
-55 to +150
300
- Derate above 25擄C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
R
胃JA
Parameter
Thermal Resistance, Junction-to-Ambient *
Typ
--
Max
60
Units
擄C/W
* When mounted on the minimum pad size recommended (PCB Mount)
漏2002 Fairchild Semiconductor Corporation
Rev. A2, January 2002