鈥?/div>
Advanced New Design
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge: 6.0nC (Typ.)
Extended Safe Operating Area
Lower R
DS(ON)
: 2.06鈩?(Typ.)
1
2
3
R
DS(ON)
= 2.7鈩?/div>
I
D
=
鈭?.2A
TO-220F
1. Gate 2. Drain 3. Source
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Characteristics
Drain-to-Source Voltage
Continuous Drain Current (T
C
= 25擄C)
Continuous Drain Current (T
C
= 100擄C)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
= 25擄C)
Linear Derating Factor
Operating Junction and Storage
Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8鈥?from case for 5-seconds
y
x
x
z
x
Value
鈭?00
鈭?.2
鈭?.39
鈭?.8
鹵30
150
鈭?.2
3.2
鈭?.5
32
0.26
鈭?5
to +150
擄C
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/擄C
THERMAL RESISTANCE
Symbol
R
胃JC
R
胃JA
Characteristics
Junction-to-Case
Junction-to-Ambient
Typ.
鈭?/div>
鈭?/div>
Max.
3.9
62.5
Units
擄C/W
REV. B
1
漏
1999 Fairchild Semiconductor Corporation
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