鈥?/div>
-13.2A, -100V, R
DS(on)
= 0.125鈩?@V
GS
= -10 V
Low gate charge ( typical 40 nC)
Low Crss ( typical 160 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175擄C maximum junction temperature rating
D
G
GD S
TO-220F
FQPF Series
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
T
C
= 25擄C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25擄C)
Drain Current
- Continuous (T
C
= 100擄C)
Drain Current
- Pulsed
(Note 1)
FQPF22P10
-100
-13.2
-9.3
-52.8
鹵
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/擄C
擄C
擄C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25擄C)
710
-13.2
4.5
-6.0
45
0.3
-55 to +175
300
- Derate above 25擄C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
R
胃JC
R
胃JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ
--
--
Max
3.3
62.5
Units
擄C/W
擄C/W
漏2002 Fairchild Semiconductor Corporation
Rev. B, August 2002