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FQPF10N20C Datasheet

  • FQPF10N20C

  • 200V N-Channel MOSFET

  • 10頁

  • FAIRCHILD

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FQP10N20C/FQPF10N20C
QFET
FQP10N20C/FQPF10N20C
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild鈥檚 proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supplies, DC-AC converters for
uninterrupted power supplies and motor controls.
TM
Features
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9.5A, 200V, R
DS(on)
= 0.36鈩?@V
GS
= 10 V
Low gate charge ( typical 20 nC)
Low Crss ( typical 40.5 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
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G
!
G DS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
!
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
T
C
= 25擄C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25擄C)
Drain Current
- Continuous (T
C
= 100擄C)
Drain Current
- Pulsed
(Note 1)
FQP10N20C
9.5
6.0
38
FQPF10N20C
200
9.5 *
6.0 *
38 *
鹵
30
210
9.5
7.2
5.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/擄C
擄C
擄C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25擄C)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25擄C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
72
0.57
-55 to +150
300
38
0.3
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
R
胃JC
R
胃JS
R
胃JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FQP10N20C
1.74
0.5
62.5
FQPF10N20C
3.33
--
62.5
Units
擄C/W
擄C/W
擄C/W
漏2003 Fairchild Semiconductor Corporation
Rev. A, March 2003

FQPF10N20C 產(chǎn)品屬性

  • High Voltage Switches for Power Processing

  • 50

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • QFET™

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 200V

  • 9.5A

  • 360 毫歐 @ 4.75A，10V

  • 4V @ 250µA

  • 26nC @ 10V

  • 510pF @ 25V

  • 38W

  • 通孔

  • TO-220-3 整包

  • TO-220F

  • 管件

  • FQPF10N20C-NDFQPF10N20CFS

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