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FQP90N10V2 Datasheet

  • FQP90N10V2

  • 100V N-Channel MOSFET

  • 922.28KB

  • 10頁

  • FAIRCHILD

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FQP90N10V2/FQPF90N10V2
QFET
FQP90N10V2/FQPF90N10V2
100V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild鈥檚 proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for DC to DC converters, sychronous rectification,
and other applications lowest Rds(on) is required.
廬
Features
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90 A, 100V, R
DS(on)
= 0.01鈩?@V
GS
= 10 V
Low gate charge ( typical 147 nC)
Low Crss ( typical 300 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
D
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G
!
G DS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
!
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
T
C
= 25擄C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25擄C)
Drain Current
- Continuous (T
C
= 100擄C)
Drain Current
- Pulsed
(Note 1)
FQP90N10V2
100
90
68
360
FQPF90N10V2
90 *
68 *
360 *
鹵
30
2430
90
25
4.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/擄C
擄C
擄C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25擄C)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25擄C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
250
1.67
-55 to +175
300
83
0.55
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
R
胃JC
R
胃JS
R
胃JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FQP90N10V2
0.6
0.5
62.5
FQPF90N10V2
1.8
--
62.5
Units
擄C/W
擄C/W
擄C/W
漏2004 Fairchild Semiconductor Corporation
Rev. A1, April 2004

FQP90N10V2 產品屬性

  • 1,000

  • 分離式半導體產品

  • FET - 單

  • QFET™

  • MOSFET N 通道，金屬氧化物

  • 標準型

  • 100V

  • 90A

  • 10 毫歐 @ 45A，10V

  • 4V @ 250µA

  • 191nC @ 10V

  • 6150pF @ 25V

  • 250W

  • 通孔

  • TO-220-3

  • TO-220

  • 管件

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