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FQP7N65C Datasheet

  • FQP7N65C

  • 650V N-Channel MOSFET

  • 10頁

  • FAIRCHILD

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FQP7N65C/FQPF7N65C
QFET
FQP7N65C/FQPF7N65C
650V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild鈥檚 proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
廬
Features
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7A, 650V, R
DS(on)
= 1.4鈩?@V
GS
= 10 V
Low gate charge ( typical 28 nC)
Low Crss ( typical 12 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
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G
!
G DS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
!
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
T
C
= 25擄C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25擄C)
Drain Current
- Continuous (T
C
= 100擄C)
Drain Current
- Pulsed
(Note 1)
FQP7N65C
650
7
4.2
28
FQPF7N65C
7*
4.2 *
28 *
鹵
30
212
7
1.6
4.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/擄C
擄C
擄C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25擄C)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25擄C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
160
1.28
-55 to +150
300
52
0.42
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
R
胃JC
R
胃CS
R
胃JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FQP7N65C
0.78
0.5
62.5
FQPF7N65C
2.4
--
62.5
Units
擄C/W
擄C/W
擄C/W
漏2004 Fairchild Semiconductor Corporation
Rev. A, May 2004

FQP7N65C 產(chǎn)品屬性

  • 1,000

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • QFET™

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 650V

  • 7A

  • 1.4 歐姆 @ 3.5A，10V

  • 4V @ 250µA

  • 36nC @ 10V

  • 1245pF @ 25V

  • 160W

  • 通孔

  • TO-220-3

  • TO-220

  • 管件

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