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FQP7N20L Datasheet

  • FQP7N20L

  • 200V LOGIC N-Channel MOSFET

  • 8頁(yè)

  • FAIRCHILD

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FQP7N20L
December 2000
QFET
FQP7N20L
200V LOGIC N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild鈥檚 proprietary,
planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize
on-state
resistance,
provide
superior
switching
performance, and withstand high energy pulse in the
avalanche and commutation modes. These devices are
well suited for high efficiency switching DC/DC converters,
switch mode power supplies, and motor control.
TM
Features
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
6.5A, 200V, R
DS(on)
= 0.75鈩?@V
GS
= 10 V
Low gate charge ( typical 6.8 nC)
Low Crss ( typical 8.5 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Low level gate drive requirement allowing direct
operation from logic drivers
D
!
"
G
G
!
DS
! "
"
"
TO-220
FQP Series
!
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
T
C
= 25擄C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25擄C)
Drain Current
- Continuous (T
C
= 100擄C)
Drain Current
- Pulsed
(Note 1)
FQP7N20L
200
6.5
4.11
26
鹵
20
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/擄C
擄C
擄C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25擄C)
73
6.5
6.3
5.5
63
0.51
-55 to +150
300
- Derate above 25擄C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8鈥?from case for 5 seconds
Thermal Characteristics
Symbol
R
胃JC
R
胃CS
R
胃JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Typ
--
0.5
--
Max
1.98
--
62.5
Units
擄C/W
擄C/W
擄C/W
漏2000 Fairchild Semiconductor International
Rev. A2, December 2000

FQP7N20L 產(chǎn)品屬性

  • 1,000

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • QFET™

  • MOSFET N 通道，金屬氧化物

  • 邏輯電平門(mén)

  • 200V

  • 6.5A

  • 750 毫歐 @ 3.25A，10V

  • 2V @ 250µA

  • 9nC @ 5V

  • 500pF @ 25V

  • 63W

  • 通孔

  • TO-220-3

  • TO-220

  • 管件

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