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FQP6N40CF Datasheet

  • FQP6N40CF

  • 400V N-Channel MOSFET

  • 8頁

  • FAIRCHILD

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FQP6N40CF 400V N-Channel MOSFET
QFET
FQP6N40CF
400V N-Channel MOSFET
Features
鈥?6A, 400V, R
DS(on)
= 1.1
鈩?/div>
@V
GS
= 10 V
鈥?Low gate charge ( typical 16nC)
鈥?Low Crss ( typical 15pF)
鈥?Fast switching
鈥?100% avalanche tested
鈥?Improved dv/dt capability
鈥?Fast recovery body diode (typical 70ns)
廬
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild鈥檚 proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
ciency switched mode power supplies, electronic lamp ballasts
based on half bridge topology.
D
鈼?/div>
鈼€
G
G DS
鈻?/div>
鈼?/div>
鈼?/div>
TO-220
FQP Series
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain Current
Drain Current
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25擄C)
- Continuous (T
C
= 100擄C)
- Pulsed
(Note 1)
FQP6N40CF
400
6
3.6
24
鹵
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/擄C
擄C
擄C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25擄C)
- Derate above 25擄C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
270
6
73
4.5
73
0.58
-55 to +150
300
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
胃JC
R
胃CS
R
胃JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
FQP6N40CF
1.71
0.5
62.5
Units
擄C/W
擄C/W
擄C/W
漏2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FQP6N40CF Rev. A

FQP6N40CF 產(chǎn)品屬性

  • 50

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • FRFET™

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 400V

  • 6A

  • 1.1 歐姆 @ 3A，10V

  • 4V @ 250µA

  • 20nC @ 10V

  • 625pF @ 25V

  • 73W

  • 通孔

  • TO-220-3

  • TO-220

  • 管件

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