鈥?/div>
3.0A, 600V, R
DS(on)
= 3.6鈩?@V
GS
= 10 V
Low gate charge ( typical 10 nC)
Low Crss ( typical 5.5 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
D
!
"
G
G
!
DS
! "
"
"
TO-220
FQP Series
!
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
T
C
= 25擄C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25擄C)
Drain Current
- Continuous (T
C
= 100擄C)
Drain Current
- Pulsed
(Note 1)
FQP3N60
600
3.0
1.9
12
鹵30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/擄C
擄C
擄C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25擄C)
200
3.0
7.5
4.5
75
0.6
-55 to +150
300
- Derate above 25擄C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
Thermal Characteristics
Symbol
R
胃JC
R
胃CS
R
胃JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Typ
--
0.5
--
Max
1.67
--
62.5
Units
擄CW
擄CW
擄CW
漏2000 Fairchild Semiconductor International
Rev. A, April 2000