音影先锋亚洲天堂网|电影世界尽头的爱完整版播放|国产 熟女 91|高清无码免费观看欧美日韩|韩国一区二区三区黄色录像|美女亚洲加勒比在线|亚洲综合网 开心五月|7x成人在线入口|成人网站免费日韩毛片区|国产黄片?一级?二级?三级

FQP18N50V2 Datasheet

  • FQP18N50V2

  • 500V N-Channel MOSFET

  • 10頁(yè)

  • FAIRCHILD

掃碼查看芯片數(shù)據(jù)手冊(cè)

上傳產(chǎn)品規(guī)格書(shū)

PDF預(yù)覽

FQP18N50V2/FQPF18N50V2
QFET
FQP18N50V2/FQPF18N50V2
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild鈥檚 proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficient switched mode power supplies,
active power factor correction, electronic lamp ballast
based on half bridge topology.
TM
Features
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
18A, 500V, R
DS(on)
= 0.265鈩?@V
GS
= 10 V
Low gate charge ( typical 42 nC)
Low Crss ( typical 11 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
D
!
鈼?/div>
鈼€
鈻?/div>
鈼?/div>
鈼?/div>
G
!
G DS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
!
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
T
C
= 25擄C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25擄C)
Drain Current
- Continuous (T
C
= 100擄C)
Drain Current
- Pulsed
(Note 1)
FQP18N50V2
18
12.1
72
FQPF18N50V2
500
18
12.1
72
鹵
30
330
18
25
4.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/擄C
擄C
擄C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25擄C)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25擄C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
208
1.67
-55 to +150
300
69
0.55
Thermal Characteristics
Symbol
R
胃JC
R
胃CS
R
胃JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
FQP18N50V2
0.6
0.5
62.5
FQPF18N50V2
1.8
--
62.5
Units
擄C/W
擄C/W
擄C/W
漏2002 Fairchild Semiconductor Corporation
Rev. B, August 2002

FQP18N50V2 產(chǎn)品屬性

  • 1,000

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • QFET™

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 500V

  • 18A

  • 265 毫歐 @ 9A，10V

  • 5V @ 250µA

  • 55nC @ 10V

  • 3290pF @ 25V

  • 208W

  • 通孔

  • TO-220-3

  • TO-220

  • 管件

FQP18N50V2相關(guān)型號(hào)PDF文件下載

掃碼下載APP，
一鍵連接廣大的電子世界。

在線人工客服

買(mǎi)家服務(wù)：
賣家服務(wù)：
技術(shù)客服：

0571-85317607

網(wǎng)站技術(shù)支持

13606545031

客服在線時(shí)間周一至周五
9:00-17:30

關(guān)注官方微信號(hào)，
第一時(shí)間獲取資訊。

建議反饋

聯(lián)系人：

聯(lián)系方式：

按住滑塊，拖拽到最右邊
>>
感謝您向阿庫(kù)提出的寶貴意見(jiàn)，您的參與是維庫(kù)提升服務(wù)的動(dòng)力！意見(jiàn)一經(jīng)采納，將有感恩紅包奉上哦！