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FQP15P12 Datasheet

  • FQP15P12

  • 120V P-Channel MOSFET

  • 10頁

  • FAIRCHILD

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FQP15P12/FQPF15P12
QFET
FQP15P12/FQPF15P12
120V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild鈥檚 proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
廬
Features
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-15A, -120V, R
DS(on)
= 0.2鈩?@V
GS
= -10 V
Low gate charge ( typical 29 nC)
Low Crss ( typical 110 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175擄C maximum junction temperature rating
S
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G
!
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G DS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
!
D
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
T
C
= 25擄C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25擄C)
Drain Current
- Continuous (T
C
= 100擄C)
Drain Current
- Pulsed
(Note 1)
FQP15P12
-120
-15
-10.6
-60
鹵
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FQPF15P12
-15 *
-10.6 *
-60 *
1157
-15
10
-5.0
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/擄C
擄C
擄C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25擄C)
- Derate above 25擄C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
100
0.67
-55 to +175
300
41
0.27
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
R
胃JC
R
胃JS
R
胃JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FQP15P12
1.5
40
62.5
FQPF15P12
3.66
--
62.5
Units
擄C/W
擄C/W
擄C/W
漏2003 Fairchild Semiconductor Corporation
Rev. A, December 2003

FQP15P12 產品屬性

  • 1,000

  • 分離式半導體產品

  • FET - 單

  • QFET™

  • MOSFET P 通道，金屬氧化物

  • 標準型

  • 120V

  • 15A

  • 200 毫歐 @ 7.5A，10V

  • 4V @ 250µA

  • 38nC @ 10V

  • 1100pF @ 25V

  • 100W

  • 通孔

  • TO-220-3

  • TO-220

  • 管件

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