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FQP13N50CF Datasheet

  • FQP13N50CF

  • 500V N-Channel MOSFET

  • 10頁

  • FAIRCHILD

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FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET
May 2006
FRFET
F
QP13N50CF / FQPF13N50CF
500V N-Channel MOSFET
Features
鈥?13A, 500V, R
DS(on)
= 0.54鈩?@V
GS
= 10 V
鈥?Low gate charge (typical 43 nC)
鈥?Low Crss (typical 20pF)
鈥?Fast switching
鈥?100% avalanche tested
鈥?Improved dv/dt capability
鈥?Fast recovery body diode (typical 100ns)
TM
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild鈥檚 proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
D
G
G DS
TO-220
FDP Series
GD S
TO-220F
FQPF Series
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J,
T
STG
T
L
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25擄C)
- Continuous (T
C
= 100擄C)
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25擄C)
- Derate above 25擄C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8鈥?from Case for 5 Seconds
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Parameter
FQP13N50CF
13
8
(Note 1)
FQPF13N50CF
500
13*
8*
52*
鹵
30
530
13
19.5
4.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
- Pulsed
52
195
1.56
-55 to +150
300
48
0.39
W
W/擄C
擄C
擄C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
胃JC
R
胃JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
FQP13N50CF
0.64
62.5
FQPF13N50CF
2.58
62.5
Unit
擄C/W
擄C/W
漏 2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FQP13N50CF / FQPF13N50CF Rev. A1

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