鈥?/div>
12A, 600V, R
DS(on)
= 0.65鈩?@V
GS
= 10 V
Low gate charge ( typical 48 nC)
Low Crss ( typical 21pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS compliant
廬
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild鈥檚 proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
D
G
G DS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J,
T
STG
T
L
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25擄C)
- Derate above 25擄C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Parameter
- Continuous (T
C
= 25擄C)
- Continuous (T
C
= 100擄C)
- Pulsed
(Note 1)
FQP12N60C
12
7.4
48
FQPF12N60C
12*
7.4*
48*
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
600
鹵
30
870
12
22.5
4.5
225
1.78
-55 to +150
300
51
0.41
W
W/擄C
擄C
擄C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8鈥?from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
胃JC
R
胃JS
R
胃JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FQP12N60C
0.56
0.5
62.5
FQPF12N60C
2.43
--
62.5
Unit
擄C/W
擄C/W
擄C/W
漏2007 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FQP12N60C / FQPF12N60C Rev. B1