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FQP12N20L Datasheet

  • FQP12N20L

  • 200V LOGIC N-Channel MOSFET

  • 570.17KB

  • 8頁

  • FAIRCHILD

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FQP12N20L
February 2001
FQP12N20L
200V LOGIC N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild鈥檚 proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supply, motor control.
Features
鈥?/div>
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11.6A, 200V, R
DS(on)
= 0.28鈩?@V
GS
= 10 V
Low gate charge ( typical 16 nC)
Low Crss ( typical 17 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Low level gate drive requirement allowing direct
opration from logic drivers
D
!
"
G
!
G DS
! "
"
"
TO-220
FQP Series
!
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
T
C
= 25擄C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25擄C)
Drain Current
- Continuous (T
C
= 100擄C)
Drain Current
- Pulsed
(Note 1)
FQP12N20L
200
11.6
7.35
46.4
鹵
20
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/擄C
擄C
擄C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25擄C)
210
11.6
9.0
5.5
90
0.72
-55 to +150
300
- Derate above 25擄C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
R
胃JC
R
胃CS
R
胃JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Typ
--
0.5
--
Max
1.39
--
62.5
Units
擄C/W
擄C/W
擄C/W
漏2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001

FQP12N20L 產(chǎn)品屬性

  • Fairchild Semiconductor

  • N-Channel

  • 200 V

  • +/- 20 V

  • 11.6 A

  • 0.28 Ohms

  • Single

  • + 150 C

  • Through Hole

  • TO-220

  • 120 ns

  • - 55 C

  • 90 W

  • 190 ns

  • 60 ns

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