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FQP11P06 Datasheet

  • FQP11P06

  • 60V P-Channel MOSFET

  • 8頁

  • FAIRCHILD

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FQP11P06
May 2001
QFET
FQP11P06
60V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild鈥檚 proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as automotive,
DC/DC converters, and high efficiency switching for power
management in portable and battery operated products.
TM
Features
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-11.4A, -60V, R
DS(on)
= 0.175鈩?@V
GS
= -10 V
Low gate charge ( typical 13 nC)
Low Crss ( typical 45 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175擄C maximum junction temperature rating
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DS
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TO-220
FQP Series
!
D
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
T
C
= 25擄C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25擄C)
Drain Current
- Continuous (T
C
= 100擄C)
Drain Current
- Pulsed
(Note 1)
FQP11P06
-60
-11.4
-8.05
-45.6
鹵
25
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/擄C
擄C
擄C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25擄C)
160
-11.4
5.3
-7.0
53
0.35
-55 to +175
300
- Derate above 25擄C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
R
胃JC
R
胃CS
R
胃JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Typ
--
0.5
--
Max
2.85
--
62.5
Units
擄C/W
擄C/W
擄C/W
漏2001 Fairchild Semiconductor Corporation
Rev. A4. May 2001

FQP11P06 產(chǎn)品屬性

  • 50

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • QFET™

  • MOSFET P 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 60V

  • 11.4A

  • 175 毫歐 @ 5.7A，10V

  • 4V @ 250µA

  • 17nC @ 10V

  • 550pF @ 25V

  • 53W

  • 通孔

  • TO-220-3

  • TO-220

  • 管件

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