音影先锋亚洲天堂网|电影世界尽头的爱完整版播放|国产 熟女 91|高清无码免费观看欧美日韩|韩国一区二区三区黄色录像|美女亚洲加勒比在线|亚洲综合网 开心五月|7x成人在线入口|成人网站免费日韩毛片区|国产黄片?一级?二级?三级

FQP11N50CF Datasheet

  • FQP11N50CF

  • 500V N-Channel MOSFET

  • 10頁

  • FAIRCHILD

掃碼查看芯片數(shù)據(jù)手冊(cè)

上傳產(chǎn)品規(guī)格書

PDF預(yù)覽

FQP11N50CF/FQPF11N50CF 500V N-Channel MOSFET
July 2005
FRFET
FQP11N50CF/FQPF11N50CF
500V N-Channel MOSFET
Features
鈥?11A, 500V, R
DS(on)
= 0.55鈩?@V
GS
= 10 V
鈥?Low Gate Charge (typical 43 nC)
鈥?Low Crss (typical 20pF)
鈥?Fast Switching
鈥?100% Avalanche Tested
鈥?Improved dv/dt Capability
鈥?Fast Recovery Body Diode (typical 90ns)
TM
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild鈥檚 proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
ciency switched mode power supplies, active power factor cor-
rection, electronic lamp ballasts based on half bridge topology.
D
鈼?/div>
鈼€
G
G DS
鈻?/div>
鈼?/div>
鈼?/div>
TO-220
FQP Series
GD S
TO-220F
FQPF Series
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (T
C
= 25擄C)
- Continuous (T
C
= 100擄C)
- Pulsed
(Note 1)
Parameter
FQP11N50CF FQPF11N50CF
500
11
7
44
鹵
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
11 *
7*
44 *
670
11
19.5
4.5
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25擄C)
- Derate above 25擄C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
195
1.56
-55 to +150
300
48
0.39
W
W/擄C
擄C
擄C
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
胃JC
R
胃JS
R
胃JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FQP11N50CF
0.64
0.5
62.5
FQPF11N50CF
2.58
--
62.5
Units
擄C/W
擄C/W
擄C/W
漏2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FQP11N50CF/FQPF11N50CF Rev. A

FQP11N50CF 產(chǎn)品屬性

  • 50

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • FRFET™

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 500V

  • 11A

  • 550 毫歐 @ 5.5A，10V

  • 4V @ 250µA

  • 55nC @ 10V

  • 2055pF @ 25V

  • 195W

  • 通孔

  • TO-220-3

  • TO-220

  • 管件

FQP11N50CF相關(guān)型號(hào)PDF文件下載

掃碼下載APP，
一鍵連接廣大的電子世界。

在線人工客服

買家服務(wù)：
賣家服務(wù)：
技術(shù)客服：

0571-85317607

網(wǎng)站技術(shù)支持

13606545031

客服在線時(shí)間周一至周五
9:00-17:30

關(guān)注官方微信號(hào)，
第一時(shí)間獲取資訊。

建議反饋

聯(lián)系人：

聯(lián)系方式：

按住滑塊，拖拽到最右邊
>>
感謝您向阿庫提出的寶貴意見，您的參與是維庫提升服務(wù)的動(dòng)力！意見一經(jīng)采納，將有感恩紅包奉上哦！