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FQP10N60CF Datasheet

  • FQP10N60CF

  • 600V N-Channel MOSFET

  • 934.99KB

  • 10頁

  • FAIRCHILD

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FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET
February 2007
FRFET
FQP10N60CF / FQPF10N60CF
600V N-Channel MOSFET
Features
鈥?9A, 600V, R
DS(on)
= 0.8鈩?@V
GS
= 10 V
鈥?Low gate charge ( typical 44 nC)
鈥?Low Crss ( typical 18 pF)
鈥?Fast switching
鈥?100% avalanche tested
鈥?Improved dv/dt capability
TM
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild鈥檚 proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
ciency switched mode power supplies, active power factor cor-
rection, electronic lamp ballasts based on half bridge topology.
D
G
G DS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25擄C)
- Continuous (T
C
= 100擄C)
Drain Current
- Pulsed
(Note 1)
Parameter
FQP10N60CF FQPF10N60CF
600
9.0
5.7
36
鹵
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
9.0 *
5.7 *
36 *
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25擄C)
- Derate above 25擄C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
583
9.0
16.9
4.5
169
1.35
-55 to +150
300
50
0.4
W
W/擄C
擄C
擄C
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
R
胃JC
R
胃JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
FQP10N60CF FQPF10N60CF
0.74
62.5
2.5
62.5
Units
擄C/W
擄C/W
漏2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FQP10N60CF / FQPF10N60CF Rev. A

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