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FQP10N50CF Datasheet

  • FQP10N50CF

  • 500V N-Channel MOSFET

  • 10頁(yè)

  • FAIRCHILD

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FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET
December 2006
FRFET
F
QP10N50CF / FQPF10N50CF
500V N-Channel MOSFET
Features
鈥?10A, 500V, R
DS(on)
= 0.61
鈩?/div>
@V
GS
= 10 V
鈥?Low gate charge (typical 43 nC)
鈥?Low Crss (typical 16pF)
鈥?Fast switching
鈥?100% avalanche tested
鈥?Improved dv/dt capability
鈥?Fast recovery body diode
TM
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild鈥檚 proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
D
G
G DS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J,
T
STG
T
L
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25擄C)
- Continuous (T
C
= 100擄C)
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25擄C)
- Derate above 25擄C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8鈥?from Case for 5 Seconds
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Parameter
FQP10N50CF
10
6.35
(Note 1)
FQPF10N50CF
500
10*
6.35*
40*
30
388
10
14.3
4.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
- Pulsed
40
143
1.14
-55 to +150
300
48
0.38
W
W/擄C
擄C
擄C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
胃JC
R
胃JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
FQP10N50CF
0.87
62.5
FQPF10N50CF
2.58
62.5
Unit
擄C/W
擄C/W
漏 2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FQP10N50CF / FQPF10N50CF Rev. A

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