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FQNL2N50B Datasheet

  • FQNL2N50B

  • 500V N-Channel MOSFET

  • 8頁

  • FAIRCHILD

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FQNL2N50B
March 2001
QFET
FQNL2N50B
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild鈥檚 proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply, power
factor correction, electronic lamp ballast based on half
bridge.
TM
Features
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.35A, 500V, R
DS(on)
= 5.3鈩?@V
GS
= 10 V
Low gate charge ( typical 6.0 nC)
Low Crss ( typical 4.0 pF)
Fast switching
Improved dv/dt capability
D
!
"
G
!
! "
"
"
TO-92L
FQNL Series
!
GDS
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
T
C
= 25擄C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25擄C)
Drain Current
- Continuous (T
C
= 100擄C)
Drain Current
- Pulsed
(Note 1)
FQNL2N50B
500
0.35
0.22
1.4
鹵
30
(Note 1)
(Note 1)
(Note 2)
Units
V
A
A
A
V
A
mJ
V/ns
W
W/擄C
擄C
擄C
Gate-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25擄C)
0.35
0.15
4.5
1.5
0.012
-55 to +150
300
- Derate above 25擄C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
R
胃JA
Parameter
Thermal Resistance, Junction-to-Ambient
Typ
--
Max
83
Units
擄C/W
漏2001 Fairchild Semiconductor Corporation
Rev. A, March 2001

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