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FQN1N60C Datasheet

  • FQN1N60C

  • 600V N-Channel MOSFET

  • 8頁

  • FAIRCHILD

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FQN1N60C 600V N-Channel MOSFET
QFET
FQN1N60C
600V N-Channel MOSFET
Features
鈥?0.3 A, 600 V, R
DS(on)
= 11.5
鈩?/div>
@ V
GS
= 10 V
鈥?Low gate charge ( typical 4.8 nC )
鈥?Low Crss ( typical 3.5 pF)
鈥?Fast switching
鈥?100 % avalanche tested
鈥?Improved dv/dt capability
廬
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild鈥檚 proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switched mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge
topology.
D
!
鈼?/div>
鈼€
鈻?/div>
鈼?/div>
鈼?/div>
G
!
TO-92
GDS
SSN Series
!
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Drain Current
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25擄C)
- Continuous (T
C
= 100擄C)
- Pulsed
(Note 1)
FQN1N60C
600
0.3
0.18
1.2
鹵
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/擄C
擄C
擄C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25擄C)
Power Dissipation (T
L
= 25擄C)
- Derate above 25擄C
33
0.3
0.3
4.5
1
3
0.02
-55 to +150
300
T
J
, T
STG
T
L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
R
胃JL
R
胃JA
Parameter
Thermal Resistance, Junction-to-Lead
Thermal Resistance, Junction-to-Ambient
(Note 6a)
(Note 6b)
Typ
--
--
Max
50
140
Units
擄C/W
擄C/W
漏2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FQN1N60C Rev. A

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