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FQN1N50CBU Datasheet

  • FQN1N50CBU

  • Small Signal Field-Effect Transistor, 0.38A I(D), 500V, 1-El...

  • 8頁

  • FAIRCHILD

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FQN1N50C 500V N-Channel MOSFET
QFET
FQN1N50C
500V N-Channel MOSFET
Features
鈥?0.38 A, 500 V, R
DS(on)
= 6.0
鈩?/div>
@ V
GS
= 10 V
鈥?Low gate charge ( typical 4.9 nC )
鈥?Low Crss ( typical 4.1 pF)
鈥?Fast switching
鈥?100 % avalanche tested
鈥?Improved dv/dt capability
January 2006
廬
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild鈥檚 proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switched mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge
topology.
D
G
TO-92
GDS
FQN Series
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Drain Current
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25擄C)
- Continuous (T
C
= 100擄C)
- Pulsed
(Note 1)
FQN1N50C
500
0.38
0.24
3.04
鹵
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/擄C
擄C
擄C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25擄C)
Power Dissipation (T
L
= 25擄C)
- Derate above 25擄C
44.4
0.38
0.21
4.5
0.89
2.08
0.017
-55 to +150
300
T
J
, T
STG
T
L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
R
胃JL
R
胃JA
Parameter
Thermal Resistance, Junction-to-Lead
Thermal Resistance, Junction-to-Ambient
(Note 6a)
(Note 6b)
Typ
--
--
Max
60
140
Units
擄C/W
擄C/W
漏2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FQN1N50C Rev. A

FQN1N50CBU 產(chǎn)品屬性

  • 1,000

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • QFET™

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 500V

  • 380mA

  • 6 歐姆 @ 190mA，10V

  • 4V @ 250µA

  • 6.4nC @ 10V

  • 195pF @ 25V

  • 890mW

  • 通孔

  • TO-226-3、TO-92-3 標(biāo)準(zhǔn)主體

  • TO-92-3

  • 散裝

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