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FQI5N60 Datasheet

  • FQI5N60

  • 600V N-Channel MOSFET

  • 9頁

  • FAIRCHILD

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FQB5N60 / FQI5N60
April 2000
QFET
FQB5N60 / FQI5N60
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild鈥檚 proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.
TM
Features
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5.0A, 600V, R
DS(on)
= 2.0鈩?@V
GS
= 10 V
Low gate charge ( typical 16 nC)
Low Crss ( typical 9.0 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
D
D
!
"
G
S
G
!
! "
"
"
D
2
-PAK
FQB Series
G D S
I
2
-PAK
FQI Series
!
S
Absolute Maximum Ratings

Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
C
= 25擄C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25擄C)
Drain Current
- Continuous (T
C
= 100擄C)
Drain Current
- Pulsed
(Note 1)
FQB5N60 / FQI5N60
600
5.0
3.15
20
鹵30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/擄C
擄C
擄C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25擄C) *
300
5.0
12
4.5
3.13
120
0.96
-55 to +150
300
T
J
, T
STG
T
L
Power Dissipation (T
C
= 25擄C)
- Derate above 25擄C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
Thermal Characteristics
Symbol
R
胃JC
R
胃JA
R
胃JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
Typ
--
--
--
Max
1.04
40
62.5
Units
擄CW
擄CW
擄CW
* When mounted on the minimum pad size recommended (PCB Mount)
漏2000 Fairchild Semiconductor International
Rev. A, April 2000

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