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FQH90N15_06 Datasheet

  • FQH90N15_06

  • N-Channel Power MOSFET

  • 10頁

  • FAIRCHILD

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FQH90N15 / FQA90N15 N-Channel Power MOSFET
FQH90N15 / FQA90N15
N-Channel Power MOSFET
Features
鈥?90A, 150V, R
DS(on)
= 0.018惟 @V
GS
= 10 V
鈥?Low gate charge (typical 220 nC)
鈥?Low C
rss
(typical 200 pF)
鈥?Fast switching
鈥?100% avalanche tested
鈥?Improved dv/dt capability
鈥?175擄C maximum junction temperature rating
QFET
Description
October 2006
廬
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild鈥檚 proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for low
voltage applications such as audio amplifire, high efficiency
switching for DC/DC converters, and DC motor control,
uninterrupted power supply.
D
G
G D
S
TO-247
FQH Series
TO-3P
G DS
FQA Series
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J,
T
STG
T
L
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25擄C)
- Derate above 25擄C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Parameter
- Continuous (T
C
= 25擄C)
- Continuous (T
C
= 100擄C)
- Pulsed
(Note 1)
FQH90N15/FQA90N15
150
90
63.5
360
鹵25
1400
90
37.5
6.0
375
2.5
-55 to +175
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/擄C
擄C
擄C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8鈥?from Case for 5 Seconds
Thermal Characteristics
Symbol
R
胃JC
R
胃CS
R
胃JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Min.
--
0.24
--
Max.
0.4
--
40
Unit
擄C/W
擄C/W
擄C/W
漏2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FQH90N15 / FQA90N15 Rev. C

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