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FQG4904 Datasheet

  • FQG4904

  • 400V Dual N & P-Channel MOSFET

  • 1159.07KB

  • 12頁

  • FAIRCHILD

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FQG4904
QFET
FQG4904
400V Dual N & P-Channel MOSFET
General Description
These dual N and P-channel enhancement mode power
field effect transistors are produced using Fairchild鈥檚
proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for electronic lamp ballast based on half bridge.
TM
Features
鈥?N-Channel 0.46A, 400V, R
DS(on)
= 3.0
鈩?/div>
@ V
GS
= 10 V
P-Channel -0.46A, -400V, R
DS(on)
= 3.0
鈩?/div>
@ V
GS
= -10 V
鈥?Low gate charge ( typical N-Channel 7.6 nC)
( typical P-Channel 20.0 nC)
鈥?Fast switching
鈥?Improved dv/dt capability
D2
D2
D1
D1
G2
S2
G1
S1
Pin #1
5
4
6
3
7
2
8-DIP
8
1
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
dv/dt
P
D
T
J
, T
STG
T
A
= 25擄C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
A
= 25擄C)
Drain Current
- Continuous (T
A
= 100擄C)
Drain Curent
- Pulsed
(Note 1)
N-Channel
400
0.46
0.29
3.68
鹵
30
(Note 2)
P-Channel
-400
-0.46
-0.29
-3.68
-4.5
Units
V
A
A
A
V
V/ns
W
W/擄C
擄C
Gate-Source Voltage
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25擄C)
- Derate above 25擄C
Operating and Storage Temperature Range
4.5
1.6
0.013
-55 to +150
Thermal Characteristics
Symbol
R
胃JA
Parameter
Thermal Resistance, Junction-to-Ambient
(Note 5a)
Typ
--
Max
78
Units
擄C/W
漏2002 Fairchild Semiconductor Corporation
Rev. A1, April 2002

FQG4904相關(guān)型號PDF文件下載

  • 型號
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    廠商
    下載
  • 英文版
    250V Dual N & P-Channel MOSFET
    FAIRCHILD
  • 英文版
    250V Dual N & P-Channel MOSFET
    FAIRCHILD ...
  • 英文版
    400V Dual N & P-Channel MOSFET
    FAIRCHILD
  • 英文版
    400V Dual N & P-Channel MOSFET
    FAIRCHILD ...

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