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FQD45N03L Datasheet

  • FQD45N03L

  • N-Channel Logic Level PWM Optimized Power MOSFET

  • 11頁(yè)

  • FAIRCHILD

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FQD45N03L
March 2004
FQD45N03L
N-Channel Logic Level PWM Optimized Power MOSFET
General Description
This device employs a new advanced MOSFET technology
and features low gate charge while maintaining low on-
resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Features
鈥?Fast switching
鈥?r
DS(ON)
= 0.018鈩?(Typ), V
GS
= 10V
鈥?r
DS(ON)
= 0.028鈩?(Typ), V
GS
= 5V
鈥?Q
g
(Typ) = 9nC, V
GS
= 5V
鈥?Q
gd
(Typ) =3nC
鈥?C
ISS
(Typ) =970pF
Applications
鈥?DC/DC converters
D
DRAIN (FLANGE)
GATE
SOURCE
G
TO-252
MOSFET Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
DSS
V
GS
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
I
D
Continuous (T
C
=
Continuous (T
C
=
Pulsed
P
D
T
J
, T
STG
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
100
o
C,
25
o
C,
V
GS
= 4.5V)
R
胃JA
=52
o
C)
V
GS
= 10V,
20
20
8
Figure 4
41
0.33
-55 to 150
Ratings
30
鹵20
S
Units
V
V
A
A
A
A
W
W/
o
C
o
C
Thermal Characteristics
R
胃JC
R
胃JA
R
胃JA
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in
2
copper pad area
3
100
52
o
C/W
C/W
o
C/W
o
Package Marking and Ordering Information
Device Marking
FQD45N03L
Device
FQD45N03L
Package
TO-252AA
Reel Size
330mm
Tape Width
16mm
Quantity
2500 units
漏2004 Fairchild Semiconductor Corporation
FQD45N03L Rev. B1

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