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FQB9P25 Datasheet

  • FQB9P25

  • 250V P-Channel MOSFET

  • 9頁

  • FAIRCHILD

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FQB9P25 / FQI9P25
December 2000
QFET
FQB9P25 / FQI9P25
250V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild鈥檚 proprietary,
planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize
on-state
resistance,
provide
superior
switching
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
well suited for high efficiency switching DC/DC converters.
TM
Features
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
-9.4A, -250V, R
DS(on)
= 0.62鈩?@V
GS
= -10 V
Low gate charge ( typical 29 nC)
Low Crss ( typical 27 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
D
S
!
鈼?/div>
鈼?/div>
G
!
G
S
鈻?鈻?/div>
鈼?/div>
D
2
-PAK
FQB Series
G D S
I
2
-PAK
FQI Series
!
D
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
C
= 25擄C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25擄C)
Drain Current
- Continuous (T
C
= 100擄C)
Drain Current
- Pulsed
(Note 1)
FQB9P25 / FQI9P25
-250
-9.4
-5.9
-37.6
鹵
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/擄C
擄C
擄C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25擄C) *
Power Dissipation (T
C
= 25擄C)
650
-9.4
12
-5.5
3.13
120
0.96
-55 to +150
300
T
J
, T
STG
T
L
- Derate above 25擄C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8鈥?from case for 5 seconds
Thermal Characteristics
Symbol
R
胃JC
R
胃JA
R
胃JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
Typ
--
--
--
Max
1.04
40
62.5
Units
擄C/W
擄C/W
擄C/W
* When mounted on the minimum pad size recommended (PCB Mount)
漏2000 Fairchild Semiconductor International
Rev. A2, December 2000

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