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FQB95N03L Datasheet

  • FQB95N03L

  • N-Channel Logic Level PWM Optimized Power MOSFET

  • 224.34KB

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FQB95N03L
December 2002
FQB95N03L
N-Channel Logic Level PWM Optimized Power MOSFET
General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Features
鈥?Fast switching
鈥?r
DS(ON)
= 0.0064鈩?(Typ), V
GS
= 10V
鈥?r
DS(ON)
= 0.010鈩?(Typ), V
GS
= 5V
鈥?Q
g
(Typ) = 24nC, V
GS
= 5V
鈥?Q
gd
(Typ) = 8nC
鈥?C
ISS
(Typ) = 2600pF
Applications
鈥?DC/DC converters
DRAIN
(FLANGE)
D
GATE
SOURCE
G
TO-263AB
MOSFET Maximum Ratings
T
C
= 25擄C unless otherwise noted
Symbol
V
DSS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
I
D
Continuous (T
C
= 100
o
C, V
GS
= 4.5V)
Continuous (T
C
=
Pulsed
P
D
T
J
, T
STG
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
25
o
C,
V
GS
= 10V, R
胃JA
=
43
o
C/W)
75
48
15
Parameter
S
Ratings
30
鹵16
Units
V
V
A
A
A
A
W
W/
o
C
o
C
Figure 4
80
0.65
-55 to 150
Thermal Characteristics
R
胃JC
R
胃JA
R
胃JA
Thermal Resistance Junction to Case TO-263
Thermal Resistance Junction to Ambient TO-263
Thermal Resistance Junction to Ambient TO-263, 1in
2
copper pad area
1.5
62
43
o
C/W
o
C/W
o
C/W
Package Marking and Ordering Information
Device Marking
FQB95N03L
Device
FQB95N03L
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
漏2002 Fairchild Semiconductor Corporation
FQB95N03L Rev. B1

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