鈥?/div>
-8.0A, -100V, R
DS(on)
= 0.53鈩?@V
GS
= -10 V
Low gate charge ( typical 12 nC)
Low Crss ( typical 30 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175擄C maximum junction temperature rating
D
D
G
G
S
D
2
-PAK
FQB Series
G D S
I
2
-PAK
FQI Series
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
C
= 25擄C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25擄C)
Drain Current
- Continuous (T
C
= 100擄C)
Drain Current
- Pulsed
(Note 1)
FQB8P10 / FQI8P10
-100
-8.0
-5.7
-32
鹵
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/擄C
擄C
擄C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25擄C) *
150
-8.0
6.5
-6.0
3.75
65
0.43
-55 to +175
300
T
J
, T
STG
T
L
Power Dissipation (T
C
= 25擄C)
- Derate above 25擄C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
R
胃JC
R
胃JA
R
胃JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
Typ
--
--
--
Max
2.31
40
62.5
Units
擄C/W
擄C/W
擄C/W
* When mounted on the minimum pad size recommended (PCB Mount)
漏2002 Fairchild Semiconductor Corporation
Rev. B, August 2002