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FQB47P06 Datasheet

  • FQB47P06

  • 60V P-Channel MOSFET

  • 9頁

  • FAIRCHILD

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FQB47P06 / FQI47P06
May 2001
QFET
FQB47P06 / FQI47P06
60V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild鈥檚 proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as automotive,
DC/DC converters, and high efficiency switching for power
management in portable and battery operated products.
TM
Features
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-47A, -60V, R
DS(on)
= 0.026鈩?@V
GS
= -10 V
Low gate charge ( typical 84 nC)
Low Crss ( typical 320 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175擄C maximum junction temperature rating
D
G
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G
S
!
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S
D
2
-PAK
FQB Series
G D S
I
2
-PAK
FQI Series
!
D
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
C
= 25擄C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25擄C)
Drain Current
- Continuous (T
C
= 100擄C)
Drain Current
- Pulsed
(Note 1)
FQB47P06 / FQI47P06
-60
-47
-33.2
-188
鹵
25
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/擄C
擄C
擄C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25擄C) *
820
-47
16
-7.0
3.75
160
1.06
-55 to +175
300
T
J
, T
STG
T
L
Power Dissipation (T
C
= 25擄C)
- Derate above 25擄C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
R
胃JC
R
胃JA
R
胃JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
Typ
--
--
--
Max
0.94
40
62.5
Units
擄C/W
擄C/W
擄C/W
* When mounted on the minimum pad size recommended (PCB Mount)
漏2001 Fairchild Semiconductor Corporation
Rev. A2. May 2001

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