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FQB25N33 Datasheet

  • FQB25N33

  • 330V N-Channel MOSFET

  • 8頁

  • FAIRCHILD

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FQB25N33 330V N-Channel MOSFET
QFET
FQB25N33
330V N-Channel MOSFET
Features
鈥?25A, 330V, R
DS(on)
= 0.23鈩?@V
GS
= 10V
鈥?Low gate charge (typical 58nC)
鈥?Low Crss (typical 40pF)
鈥?Fast switching
鈥?100% avalanche tested
鈥?Improved dv/dt capability
鈥?RoHS Compliant
LE
REE
I
DF
September 2006
廬
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Farichild鈥檚 proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimized on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficient switched mode power supplies,
active power factor correction, electronic lamp ballast
based on half bridge topology.
鈥?Qualified to AEC Q101
A
Absolute Maximum Ratings
Symbol
V
DSS
Drain-Source Voltage
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Drain Current
Parameter
FQB25N33
330
25
16.0
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
o
o
- Continuous (T
C
= 25
o
C)
- Continuous (T
C
= 100 C)
M
E
N
TA
TIO
L
E
N
MP
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/
o
C
o
o
- Pulsed
100
鹵30
370
25
37
4.5
3.1
250
Gate -Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalance Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25 C) *
Power Dissipation (T
C
= 25 C)
- Derate above 25 C
o
o
2.0
-55 to +150
300
T
J
, T
STG
Operating and Storage Temperature
T
L
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
C
C
Thermal Characteristics
Symbol
R
胃JC
R
胃JA
R
胃JA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient *
Thermal Resistance, Junction to Ambient
FQB25N33
0.5
40
62.5
Units
o
o
o
C/W
C/W
C/W
* When mounted on the minimum pad size recommended (PCB Mount)
漏2006 Fairchild Semiconductor Corporation
FQB25N33 Rev.
A
1
www.fairchildsemi.com

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