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FQB16N25CTM Datasheet

  • FQB16N25CTM

  • 250V N-Channel MOSFET

  • 9頁(yè)

  • FAIRCHILD

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FQB16N25C/FQI16N25C 250V N-Channel MOSFET
June 2006
QFET
FQB16N25C/FQI16N25C
250V N-Channel MOSFET
Features
鈥?15.6A, 250V, R
DS(on)
= 0.27
鈩?/div>
@V
GS
= 10 V
鈥?Low gate charge ( typical 41nC)
鈥?Low Crss ( typical 68pF)
鈥?Fast switching
鈥?100% avalanche tested
鈥?Improved dv/dt capability
廬
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild鈥檚 proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switching DC/DC converters, switch mode power
supplies, DC-AC converters for uninterrupted power supplies
and motor controls.
D
D
G
S
D -PAK
FQB Series
2
I
2
-PAK
G D S
FQI Series
G
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (T
C
= 25擄C)
- Continuous (T
C
= 100擄C)
- Pulsed
(Note 1)
Parameter
FQB16N25C / FQI16N25C
250
15.6
9.8
62.4
鹵
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/擄C
擄C
擄C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25擄C)*
Power Dissipation (T
C
= 25擄C)
- Derate above 25擄C
410
15.6
13.9
5.5
3.13
139
1.11
-55 to +150
300
T
J
, T
STG
T
L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
R
胃JC
R
胃JA
R
胃JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient*
Thermal Resistance, Junction-to-Ambient
FQB16N25C / FQI16N25C
0.9
40
62.5
Units
擄C/W
擄C/W
擄C/W
* When mounted on the minimum pad size recommended (PCB Mount)
漏2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FQB16N25C/FQI16N25C Rev. A1

FQB16N25CTM 產(chǎn)品屬性

  • 800

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • QFET™

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 250V

  • 15.6A

  • 270 毫歐 @ 7.8A，10V

  • 4V @ 250µA

  • 53.5nC @ 10V

  • 1080pF @ 25V

  • 3.13W

  • 表面貼裝

  • TO-263-3，D²Pak（2 引線+接片），TO-263AB

  • D²PAK

  • 帶卷 (TR)

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