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FQAF6N80 Datasheet

  • FQAF6N80

  • 800V N-Channel MOSFET

  • 8頁

  • FAIRCHILD

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FQAF6N80
September 2000
QFET
FQAF6N80
800V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild鈥檚 proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.
TM
Features
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4.4A, 800V, R
DS(on)
= 1.95鈩?@V
GS
= 10 V
Low gate charge ( typical 31 nC)
Low Crss ( typical 14 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
D
!
"
G
!
G D S
3
"
"
5
TO-3PF
FQAF Series
!
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
T
C
= 25擄C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25擄C)
Drain Current
- Continuous (T
C
= 100擄C)
Drain Current
- Pulsed
(Note 1)
FQAF6N80
800
4.4
2.78
17.6
鹵
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/擄C
擄C
擄C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25擄C)
680
4.4
9.0
4.0
90
0.72
-55 to +150
300
- Derate above 25擄C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
R
胃JC
R
胃JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ
--
--
Max
1.39
40
Units
擄C/W
擄C/W
漏2000 Fairchild Semiconductor International
Rev. A, September 2000

FQAF6N80 產(chǎn)品屬性

  • 360

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • QFET™

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 800V

  • 4.4A

  • 1.95 歐姆 @ 2.2A，10V

  • 5V @ 250µA

  • 31nC @ 10V

  • 1500pF @ 25V

  • 90W

  • 通孔

  • SC-94

  • TO-3PF

  • 管件

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