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FQA7N80C_07 Datasheet

  • FQA7N80C_07

  • 800V N-Channel MOSFET

  • 8頁(yè)

  • FAIRCHILD

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FQA7N80C_F109 800V N-Channel MOSFET
September 2007
QFET
FQA7N80C_F109
800V N-Channel MOSFET
Features
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7.0A, 800V, R
DS(on)
= 1.9鈩?@V
GS
= 10 V
Low gate charge ( typical 27nC)
Low Crss ( typical 10pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS compliant
廬
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild鈥檚 proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
D
G
TO-3PN
G DS
FQA Series
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (T
C
= 25擄C)
- Continuous (T
C
= 100擄C)
- Pulsed
(Note 1)
Parameter
FQA7N80C_F109
800
7.0
4.4
28.0
鹵
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/擄C
擄C
擄C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25擄C)
- Derate above 25擄C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
580
7.0
30
4.0
198
1.75
-55 to +150
300
Thermal Characteristics
Symbol
R
胃JC
R
胃CS
R
胃JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Typ
--
0.24
--
Max
0.63
--
40
Units
擄C/W
擄C/W
擄C/W
漏2007 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FQA7N80C_F109 Rev. A

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