FQA13N50CF 500V N-Channel MOSFET
FRFET
FQA13N50CF
500V N-Channel MOSFET
Features
鈥?15A, 500V, R
DS(on)
= 0.48鈩?@V
GS
= 10 V
鈥?Low gate charge (typical 43 nC)
鈥?Low Crss (typical 20pF)
鈥?Fast switching
鈥?100% avalanche tested
鈥?Improved dv/dt capability
鈥?Fast recovery body diode (typical 100ns)
TM
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild鈥檚 proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
ciency switched mode power supplies, active power factor cor-
rection, electronic lamp ballasts based on half bridge topology.
D
!
"
G
!
! "
"
"
TO-3P
G D S
FQA Series
!
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25擄C)
- Continuous (T
C
= 100擄C)
Drain Current
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25擄C)
- Derate above 25擄C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Parameter
FQA13N50CF
500
15
9.5
60
鹵
30
860
15
21.8
4.5
218
1.56
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/擄C
擄C
擄C
Thermal Characteristics
Symbol
R
胃JC
R
胃JS
R
胃JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
Typ
--
0.24
--
Max
0.58
--
40
Units
擄C/W
擄C/W
擄C/W
漏2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FQA13N50CF Rev. A